Datasheet

PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 8 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
t
d
delay time V
CC
= −9.2 V; I
C
= −2A;
I
Bon
= −0.1 A; I
Boff
=0.1A
-13-ns
t
r
rise time - 53 - ns
t
on
turn-on time - 66 - ns
t
s
storage time - 230 - ns
t
f
fall time - 76 - ns
t
off
turn-off time - 306 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
-110-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-58-pF
Table 7. Characteristics
…continued
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit