Datasheet
PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 7 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −60 V; I
E
=0A - - −100 nA
V
CB
= −60 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −48 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V; I
C
= −500 mA 180 265 -
V
CE
= −2V; I
C
= −1A
[1]
160 235 -
V
CE
= −2V; I
C
= −2A
[1]
130 185 -
V
CE
= −2V; I
C
= −3A
[1]
95 135 -
V
CE
= −2V; I
C
= −4A
[1]
60 80 -
V
CE
= −2V; I
C
= −5A
[1]
35 50 -
V
CE
= −2V; I
C
= −6A
[1]
20 30 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −55 −70 mV
I
C
= −1A; I
B
= −50 mA - −100 −135 mV
I
C
= −2A; I
B
= −200 mA
[1]
- −150 −200 mV
I
C
= −3A; I
B
= −150 mA
[1]
- −275 −365 mV
I
C
= −3A; I
B
= −300 mA
[1]
- −210 −290 mV
I
C
= −4A; I
B
= −400 mA
[1]
- −285 −385 mV
I
C
= −5A; I
B
= −500 mA
[1]
- −375 −495 mV
I
C
= −6A; I
B
= −600 mA
[1]
- −515 −675 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2A; I
B
= −200 mA
[1]
- 75 100 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −0.78 −0.87 V
I
C
= −1A; I
B
= −50 mA - −0.80 −0.89 V
I
C
= −1A; I
B
= −100 mA
[1]
- −0.83 −0.92 V
I
C
= −3A; I
B
= −150 mA
[1]
- −0.92 −0.99 V
I
C
= −3A; I
B
= −300 mA
[1]
- −0.94 −1.02 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A - −0.80 −1.00 V