Datasheet

PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 7 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 60 V; I
E
=0A - - 100 nA
V
CB
= 60 V; I
E
=0A;
T
j
=150°C
--50 μA
I
CES
collector-emitter
cut-off current
V
CE
= 48 V; V
BE
=0V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
= 5V; I
C
=0A - - 100 nA
h
FE
DC current gain V
CE
= 2V; I
C
= 500 mA 180 265 -
V
CE
= 2V; I
C
= 1A
[1]
160 235 -
V
CE
= 2V; I
C
= 2A
[1]
130 185 -
V
CE
= 2V; I
C
= 3A
[1]
95 135 -
V
CE
= 2V; I
C
= 4A
[1]
60 80 -
V
CE
= 2V; I
C
= 5A
[1]
35 50 -
V
CE
= 2V; I
C
= 6A
[1]
20 30 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA - 55 70 mV
I
C
= 1A; I
B
= 50 mA - 100 135 mV
I
C
= 2A; I
B
= 200 mA
[1]
- 150 200 mV
I
C
= 3A; I
B
= 150 mA
[1]
- 275 365 mV
I
C
= 3A; I
B
= 300 mA
[1]
- 210 290 mV
I
C
= 4A; I
B
= 400 mA
[1]
- 285 385 mV
I
C
= 5A; I
B
= 500 mA
[1]
- 375 495 mV
I
C
= 6A; I
B
= 600 mA
[1]
- 515 675 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 2A; I
B
= 200 mA
[1]
- 75 100 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA - 0.78 0.87 V
I
C
= 1A; I
B
= 50 mA - 0.80 0.89 V
I
C
= 1A; I
B
= 100 mA
[1]
- 0.83 0.92 V
I
C
= 3A; I
B
= 150 mA
[1]
- 0.92 0.99 V
I
C
= 3A; I
B
= 300 mA
[1]
- 0.94 1.02 V
V
BEon
base-emitter turn-on
voltage
V
CE
= 2V; I
C
= 2A - 0.80 1.00 V