Datasheet

PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 6 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
FR4 PCB, mounting pad for collector 6 cm
2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa273
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa751
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0