Datasheet

PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 4 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Pulse test: t
p
10 ms; δ≤10 %.
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, mounting pad for collector 1 cm
2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
(1)
T
amb
(°C)
75 17512525 7525
006aaa270
800
400
1200
1600
P
tot
(mW)
0
(2)
(4)
(3)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--350K/W
[2]
--208K/W
[3]
--167K/W
[4]
--113K/W
[1][5]
--50K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--45K/W