Datasheet

PBSS302NZ_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 6 of 14
NXP Semiconductors
PBSS302NZ
20 V, 5.8 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=20V; I
E
= 0 A - - 100 nA
V
CB
=20V; I
E
=0A;
T
j
=150°C
--50μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V; I
C
=0.5A
[1]
300 570 -
V
CE
=2V; I
C
=1A
[1]
300 550 -
V
CE
=2V; I
C
=2A
[1]
250 520 -
V
CE
=2V; I
C
=4A
[1]
200 450 -
V
CE
=2V; I
C
=7A
[1]
200 350 -
V
CEsat
collector-emitter
saturation voltage
I
C
=0.5A; I
B
=50mA
[1]
- 2025mV
I
C
=1A; I
B
=50mA
[1]
- 3550mV
I
C
=1A; I
B
=10mA
[1]
- 5070mV
I
C
=2A; I
B
=40mA
[1]
- 70 100 mV
I
C
=4A; I
B
=200mA
[1]
- 120 170 mV
I
C
=4A; I
B
=400mA
[1]
- 115 165 mV
I
C
=4A; I
B
=40mA
[1]
- 155 240 mV
I
C
=5.8A; I
B
=290mA
[1]
- 170 250 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=4A; I
B
=200mA
[1]
- 3043mΩ
I
C
=4A; I
B
=40mA
[1]
- 3860mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1A; I
B
=100mA
[1]
-0.820.9V
I
C
=4A; I
B
=400mA
[1]
-0.921.05V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V; I
C
=2A
[1]
-0.750.85V
t
d
delay time V
CC
=12.5V; I
C
=3A;
I
Bon
=0.15A;
I
Boff
= −0.15 A
-15-ns
t
r
rise time - 40 - ns
t
on
turn-on time - 55 - ns
t
s
storage time - 270 - ns
t
f
fall time - 85 - ns
t
off
turn-off time - 355 - ns
f
T
transition frequency V
CE
=10V; I
C
=100mA;
f=100MHz
-140-MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 95 150 pF