Datasheet

PBSS301PZ_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 17 November 2009 6 of 14
NXP Semiconductors
PBSS301PZ
12 V, 5.7 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −12 V; I
E
=0A - - −100 nA
V
CB
= −12 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V; I
C
= −0.5 A
[1]
250 400 -
V
CE
= −2V; I
C
= −1A
[1]
250 380 -
V
CE
= −2V; I
C
= −2A
[1]
200 335 -
V
CE
= −2V; I
C
= −4A
[1]
150 250 -
V
CE
= −2V; I
C
= −7A
[1]
100 160 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA
[1]
- −20 −30 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −40 −60 mV
I
C
= −1A; I
B
= −10 mA
[1]
- −60 −90 mV
I
C
= −2A; I
B
= −40 mA
[1]
- −80 −120 mV
I
C
= −4A; I
B
= −200 mA
[1]
- −130 −180 mV
I
C
= −4A; I
B
= −400 mA
[1]
- −120 −170 mV
I
C
= −4A; I
B
= −40 mA
[1]
- −165 −260 mV
I
C
= −5.7 A; I
B
= −285 mA
[1]
- −170 −245 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −200 mA
[1]
-32.545mΩ
I
C
= −4A; I
B
= −40 mA
[1]
-4165mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA
[1]
- −0.82 −0.9 V
I
C
= −4A; I
B
= −400 mA
[1]
- −0.93 −1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.76 −0.85 V
t
d
delay time V
CC
= −12.5 V; I
C
= −3A;
I
Bon
= −0.15 A;
I
Boff
=0.15A
-10-ns
t
r
rise time - 55 - ns
t
on
turn-on time - 65 - ns
t
s
storage time - 165 - ns
t
f
fall time - 160 - ns
t
off
turn-off time - 325 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
-140-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-190250pF