Datasheet

PBSS301PD_3 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 03 — 17 December 2007 4 of 14
NXP Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Operated under pulsed conditions: Duty cycle δ≤10 % and pulse width t
p
≤ 10 ms.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 350 K/W
[2]
- - 208 K/W
[3]
- - 167 K/W
[4]
- - 113 K/W
[1][5]
- - 50 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 45 K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa271
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0