Datasheet

PBSS301PD_3 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 03 — 17 December 2007 2 of 14
NXP Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
132
4
56
4
3
1, 2, 5, 6
sym030
Table 3. Ordering information
Type number Package
Name Description Version
PBSS301PD SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS301PD C8
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −20 V
V
CEO
collector-emitter voltage open base - −20 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current
[1]
- −4A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −15 A
I
B
base current - −0.8 A
I
BM
peak base current single pulse;
t
p
≤ 1ms
- −2A
P
tot
total power dissipation T
amb
≤ 25 °C
[2]
- 360 mW
[3]
- 600 mW
[4]
- 750 mW
[1]
- 1.1 W
[2][5]
- 2.5 W