Datasheet

PBSS301PD_3 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 03 — 17 December 2007 12 of 14
NXP Semiconductors
PBSS301PD
20 V, 4 A PNP low V
CEsat
(BISS) transistor
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS301PD_3 20071217 Product data sheet - PBSS301PD_2
Modifications:
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Section 1.1 “General description”: amended
Table 6: typing error for maximum value on 6 cm
2
footprint amended
Figure 2, 3, 4, 6, 7 and 11: amended
Figure 15: superseded by minimized package outline drawing
Section 11 “Soldering”: added
Section 13 “Legal information”: updated
PBSS301PD_2 20050425 Product data sheet - PBSS301PD_1
PBSS301PD_1 20050404 Product data sheet - -