Datasheet

PBSS301NX_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 17 November 2009 6 of 15
NXP Semiconductors
PBSS301NX
12 V, 5.3 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=12V; I
E
= 0 A - - 100 nA
V
CB
=12V; I
E
=0A;
T
j
=150°C
--50μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V; I
C
=0.5A
[1]
300 530 -
V
CE
=2V; I
C
=1A
[1]
300 520 -
V
CE
=2V; I
C
=2A
[1]
250 480 -
V
CE
=2V; I
C
=4A
[1]
200 420 -
V
CE
=2V; I
C
=6A
[1]
200 340 -
V
CEsat
collector-emitter
saturation voltage
I
C
=0.5A; I
B
=50mA
[1]
-1825mV
I
C
=1A; I
B
=50mA
[1]
-3550mV
I
C
=1A; I
B
=10mA
[1]
-5070mV
I
C
=2A; I
B
=40mA
[1]
-70100mV
I
C
=4A; I
B
=200mA
[1]
-110160mV
I
C
=4A; I
B
=400mA
[1]
- 100 140 mV
I
C
=4A; I
B
=40mA
[1]
- 125 190 mV
I
C
=5.3A; I
B
=265mA
[1]
- 140 200 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=4A; I
B
=200mA
[1]
-2840mΩ
I
C
=4A; I
B
=40mA
[1]
-3248mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1A; I
B
=100mA
[1]
-0.810.9V
I
C
=4A; I
B
=400mA
[1]
-0.921.05V
V
BEon
base-emitter turn-on
voltage
V
CE
=2V; I
C
=2A
[1]
-0.750.85V
t
d
delay time V
CC
=12.5V; I
C
=3A;
I
Bon
=0.15A;
I
Boff
= −0.15 A
-15- ns
t
r
rise time - 40 - ns
t
on
turn-on time - 55 - ns
t
s
storage time - 195 - ns
t
f
fall time - 75 - ns
t
off
turn-off time - 270 - ns
f
T
transition frequency V
CE
=10V; I
C
=0.1A;
f=100MHz
- 140 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 125 160 pF