Datasheet
PBSS2540MB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 4 April 2012 7 of 12
NXP Semiconductors
PBSS2540MB
40 V, 0.5 A NPN low VCEsat (BISS) transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 9. Collector-emitter saturation resistance as a
function of collector current; typical values
10
3
10
2
10
mhc086
10
−1
110
V
CEsat
(mV)
I
C
(mA)
10
2
10
3
(1)
(2)
(3)
10
3
10
2
10
1
10
−1
mhc087
10
−1
1
R
CEsat
(Ω)
10
I
C
(mA)
10
2
10
3
(1)
(2)
(3)