Datasheet

2003 Jul 22 6
NXP Semiconductors Product data sheet
40 V, 0.5 A
NPN low V
CEsat
(BISS) transistor
PBSS2540M
handbook, halfpage
05
1200
0
400
800
1000
200
600
12
V
CE
(V)
3
I
C
(mA)
4
MHC083
(10)
(2)
(4)
(6)
(5)
(3)
(1)
(8)
(7)
(9)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 25 mA.
(2) I
B
= 22.5 mA.
(3) I
B
= 20 mA.
(4) I
B
= 17.5 mA.
(5) I
B
= 15 mA.
(6) I
B
= 12.5 mA.
(7) I
B
= 10 mA.
(8) I
B
= 7.5 mA.
(9) I
B
= 5 mA.
(10) I
B
= 2.5 mA.
T
amb
= 25 °C.
handbook, halfpage
10
3
10
2
10
1
10
−1
MHC087
10
−1
1
R
CEsat
(Ω)
10
I
C
(mA)
10
2
10
3
(1)
(2)
(3)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.