Datasheet

2004 Dec 23 6
NXP Semiconductors Product data sheet
15 V low V
CE(sat)
NPN double transistor
PBSS2515VS
handbook, halfpage
10
2
10
1
10
−1
MLD648
10
−1
110
I
C
(mA)
R
CEsat
(Ω)
10
2
10
3
(2)
(1)
(3)
Fig.6 Equivalent on-resistance as a function of
collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
(1)
(2)(3)
(4)
(6)
(8)
I
C
(mA)
V
CE
(V)
1200
800
400
0
210
468
MLD644
(9)
(10)
(7)
(5)
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 4.6 mA.
(2) I
B
= 4.14 mA.
(3) I
B
= 3.68 mA.
(4) I
B
= 3.22 mA.
(5) I
B
= 2.76 mA.
(6) I
B
= 2.3 mA.
(7) I
B
= 1.84 mA.
(8) I
B
= 1.38 mA.
(9) I
B
= 0.92 mA.
(10) I
B
= 0.46 mA.
T
amb
= 25 °C.