Datasheet

2004 Dec 23 2
NXP Semiconductors Product data sheet
15 V low V
CE(sat)
NPN double transistor
PBSS2515VS
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Excellent coplanarity due to straight leads
• Low collector-emitter saturation voltage
• High current capability
• Improved thermal behaviour due to flat lead
• Replaces two SC-75/SC-89 packaged low V
CEsat
transistors on same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
• Audio frequency general purpose amplifier applications
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low V
CEsat
double transistor in a SOT666 plastic
package.
PNP complement: PBSS3515VS.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
PBSS2515VS N9
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 15 V
I
CM
peak collector current 1 A
R
CEsat
equivalent on-resistance <500 mΩ
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
MAM447
132
TR1
TR2
6
4
5
123
46
5
Top view
Fig.1 Simplified outline (SOT666) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS2515VS − plastic surface mounted package; 6 leads SOT666