Datasheet

PBSS2515MB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 26 January 2012 7 of 12
NXP Semiconductors
PBSS2515MB
15 V, 0.5 A NPN low VCEsat (BISS) transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors and is
suitable for use in automotive applications.
T
amb
= 25 °C
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig 8. Collector current as a function of
collector-emitter voltage; typical values
Fig 9. Collector-emitter equivalent on-resistance as a
function of collector current; typical values
V
CE
(V)
0 2.01.50.5 1.0
006aac991
0.4
0.6
0.2
0.8
1.0
I
C
(A)
0
I
B
(mA) = 7.0
6.3
5.6
4.9
4.2
3.5
2.8
2.1
1.4
0.7
10
2
10
1
10
−1
mle103
10
−1
110
I
C
(mA)
R
CEsat
(Ω)
10
2
10
3
(2)
(1)
(3)