Datasheet
2003 Sep 15 6
NXP Semiconductors Product data sheet
15 V, 0.5 A
NPN low V
CEsat
(BISS) transistor
PBSS2515M
handbook, halfpage
0 0.5 1
V
CE
(V)
I
C
(A)
2
1
0
0.8
1.5
0.6
0.4
0.2
MLE099
(1)
(9)
(8)
(7)
(6)
(4)
(10)
(5)
(2)(3)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 7 mA.
(2) I
B
= 6.3 mA.
(3) I
B
= 5.6 mA.
(4) I
B
= 4.9 mA.
(5) I
B
= 4.2 mA.
(6) I
B
= 3.5 mA.
(7) I
B
= 2.8 mA.
(8) I
B
= 2.1 mA.
(9) I
B
= 1.4 mA.
(10) I
B
= 0.7 mA.
T
amb
= 25 °C.
handbook, halfpage
10
2
10
1
10
−1
MLE103
10
−1
110
I
C
(mA)
R
CEsat
(Ω)
10
2
10
3
(2)
(1)
(3)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.