Datasheet
2003 Sep 15 2
NXP Semiconductors Product data sheet
15 V, 0.5 A
NPN low V
CEsat
(BISS) transistor
PBSS2515M
FEATURES
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability I
C
and I
CM
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
Low V
CEsat
NPN transistor in a SOT883 leadless ultra
small plastic package.
PNP complement: PBSS3515M.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
MAM475
1
2
3
2
1
3
Bottom view
Fig.1 Simplified outline (SOT883) and symbol.
MARKING
TYPE NUMBER MARKING CODE
PBSS2515M S2
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage 15 V
I
C
collector current (DC) 500 mA
I
CM
peak collector current 1 A
R
CEsat
equivalent on-resistance <500 mΩ