Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 9 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics for PNP low V
CEsat
transistor
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
= −40 V; I
E
=0A - - −100 nA
V
CB
= −40 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CEO
collector-emitter cut-off
current
V
CE
= −30 V; I
B
=0A - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5V
[1]
I
C
= −1 mA 300 - -
I
C
= −100 mA 300 - 800
I
C
= −500 mA 200 - -
I
C
= −1 A 140 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −1mA
[1]
- −85 −140 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
- −120 −170 mV
I
C
= −1A; I
B
= −100 mA
[1]
- −200 −310 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −500 mA; I
B
= −50 mA
[1]
- 240 340 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= −1A; I
B
= −100 mA
[1]
--−1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −5V; I
C
= −1A
[1]
--−1V
f
T
transition frequency V
CE
= −10 V; I
C
= −50 mA;
f=100MHz
150 - - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
--12pF