Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 8 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
2
Fig 8. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
FR4 PCB, single-sided copper, mounting pad for drain 1 cm
2
Fig 9. MOSFET: Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
006aac613
10
–5
1010
–2
10
–4
10
2
10
–1
t
p
(s)
10
–3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
006aac614
t
p
(s)
10
–3
10
2
10
3
10110
–2
10
–1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
duty cycle = 1