Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 6 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
PNP low V
CEsat
(BISS) transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--115K/W
[2]
--100K/W
N-channel Trench MOSFET
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[3]
--165K/W
FR4 PCB, single-sided copper, standard footprint
Fig 5. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac610
10
–5
1010
–2
10
–4
10
2
10
–1
t
p
(s)
10
–3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75