Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 5 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
I
DM
= single pulse
(1) t
p
=1ms
(2) DC; T
sp
=25°C
(3) t
p
=10ms
(4) t
p
= 100 ms
(5) DC; T
amb
=25°C; drain mounting pad 1 cm
2
Fig 4. MOSFET: Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
006aac609
V
DS
(V)
10
–1
10
2
101
1
10
–1
10
I
D
(A)
10
–2
(1)
(2)
(3)
(4)
(5)
Limit R
DSon
= V
DS
/I
D