Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 4 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm
2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm
2
(4) FR4 PCB, single-sided copper, standard footprint
Fig 1. BISS transistor: Power derating curves
Fig 2. MOSFET: Normalized total power dissipation
as a function of solder point temperature
Fig 3. MOSFET: Normalized continuous drain current
as a function of solder point temperature
T
amb
(°C)
–75 17512525 75–25
006aac608
1.4
P
tot
(W)
1.0
0.6
0.2
0.0
0.4
0.8
1.2
(2)
(1)
(3)
(4)
T
sp
(°C)
0 20015050 100
03aa17
40
80
120
P
der
(%)
0
T
sp
(°C)
0 20015050 100
03aa25
40
80
120
I
der
(%)
0
P
der
P
tot
P
tot 25°C()
------------------------
100 %×= I
der
I
D
I
D25°C()
--------------------
100 %×=