Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 3 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[4] Pulse test: t
p
≤ 20 ms; δ≤0.10.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PNP low V
CEsat
(BISS) transistor
V
CBO
collector-base voltage open emitter - −40 V
V
CEO
collector-emitter voltage open base - −40 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current
[1]
- −1.8 A
I
CRM
repetitive peak collector
current
[1][4]
- −2A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
[1]
- −3A
I
B
base current
[1]
- −300 mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
[1]
- −1A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-1.1W
[2]
-1.25W
N-channel Trench MOSFET
V
DS
drain-source voltage T
amb
=25°C-30V
V
DG
drain-gate voltage T
amb
=25°C;
R
GS
=20kΩ
-30V
V
GS
gate-source voltage T
amb
=25°C-±8V
I
D
drain current V
GS
=10V
[3]
T
amb
=25°C - 660 mA
T
amb
= 100 °C - 420 mA
I
DM
peak drain current T
amb
=25°C;
single pulse;
t
p
≤ 10 μs
-3.56A
P
tot
total power dissipation T
amb
=25°C
[3]
- 760 mW
Source-drain diode
I
S
source current T
amb
=25°C - 660 mA
Per device
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C