Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 2 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[2] Pulse test: t
p
≤ 300 μs; δ≤0.02.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[4] Pulse test: t
p
≤ 300 μs; δ≤0.01.
[5] Pulse test: t
p
≤ 20 ms; δ≤0.10.
2. Pinning information
3. Ordering information
4. Marking
N-channel Trench MOSFET
V
DS
drain-source voltage T
amb
=25°C --30V
V
GS
gate-source voltage T
amb
=25°C--±8V
I
D
drain current T
amb
=25°C;
V
GS
=10V
[3]
--0.66A
R
DSon
drain-source on-state
resistance
T
j
=25°C; V
GS
=4.5V;
I
D
=0.2A
[4]
- 370 580 mΩ
Table 1. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1emitter
2base
3drain
4source
5gate
6 collector
7 collector
8drain
Transparent top view
6
78
54
123
017aaa079
6, 7 5 4
1 2 3, 8
Table 3. Ordering information
Type number Package
Name Description Version
PBSM5240PF HUSON6 plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals; body 2 × 2 × 0.65 mm
SOT1118
Table 4. Marking codes
Type number Marking code
PBSM5240PF 1G