Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 15 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
Fig 26. MOSFET: Gate charge waveform definitions Fig 27. MOSFET: Source current as a function of
source-drain voltage; typical values
017aaa13
7
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
V
SD
(V)
010.80.4 0.60.2
03an97
0.4
0.6
0.2
0.8
1
I
S
(A)
0
150 °C
T
j
= 25 °C
V
GS
= 0 V
Fig 28. Package outline SOT1118
10-05-31Dimensions in mm
0.04
max
0.65
max
0.77
0.57
(2×)
0.54
0.44
(2×)
2.1
1.9
2.1
1.9
1.1
0.9
0.3
0.2
0.65
(4×)
0.35
0.25
(6×)
43
1 6
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000
PBSM5240PF SOT1118 4 mm pitch, 8 mm tape and reel -115