Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 14 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
I
D
=1mA; V
DS
=V
GS
Fig 22. MOSFET: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
Fig 23. MOSFET: Gate-source threshold voltage as a
function of junction temperature
f=1MHz; V
GS
=0V
Fig 24. MOSFET: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
Fig 25. MOSFET: Gate-source voltage as a function of
gate charge; typical values
T
j
(°C)
–60 180120060
006aac618
0.6
1.2
1.8
a
0.0
T
j
(°C)
−60 180120060
03aj65
0.6
0.3
0.9
1.2
V
GS(th)
(V)
0
max
min
typ
a
R
DSon
R
DSon 25°C()
-----------------------------
=
03an98
1
10
10
2
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
03an99
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
Q
G
(nC)
V
GS
(V)
I
D
= 1 A
T
j
= 25
°
C
V
DS
= 15 V