Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 13 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
T
j
=25°CT
j
=25°C; V
DS
=5V
Fig 18. MOSFET: Output characteristics: drain current
as a function of drain-source voltage;
typical values
Fig 19. MOSFET: Sub-threshold drain current as a
function of gate-source voltage
T
j
=25°C
(1) V
GS
=1.8V
(2) V
GS
=2.0V
(3) V
GS
=2.5V
(4) V
GS
=3.0V
(5) V
GS
=4.5V
V
DS
>I
D
× R
DSon
Fig 20. MOSFET: Drain-source on-state resistance as
a function of drain current; typical values
Fig 21. MOSFET: Transfer characteristics: drain
current as a function of gate-source voltage;
typical values
03an94
0
0.5
1
1.5
2
2.5
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
4.5 3 2.5
2
1.8
V
GS
(V) = 1.5
03am43
V
GS
(V)
0 1.20.80.4
10
−4
10
−5
10
−3
I
D
(A)
10
−6
min typ max
I
D
(A)
0.0 2.52.01.0 1.50.5
006aac616
0.4
0.6
0.2
0.8
1.0
R
DSon
(Ω)
0.0
(2)(1)
(3)
(4)
(5)
03an96
0
0.5
1
1.5
2
2.5
01234
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C