Datasheet

PBSM5240PF All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 April 2011 12 of 20
NXP Semiconductors
PBSM5240PF
40 V, 2 A PNP BISS/Trench MOSFET module
[1] Pulse test: t
p
≤ 300 μs; δ≤0.01.
Table 8. Characteristics for N-channel Trench MOSFET
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=10μA; V
GS
=0V
T
j
=25°C 30--V
T
j
= −55 °C 27--V
V
GS(th)
gate-source threshold
voltage
I
D
=250μA; V
DS
=V
GS
T
j
=25°C 0.45 0.7 0.95 V
T
j
= 150 °C 0.25--V
T
j
= −55 °C --1.15V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V
T
j
=25°C --1μA
T
j
= 150 °C - - 100 μA
I
GSS
gate leakage current V
GS
= ±8V; V
DS
=0V - 10 ±100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=0.2A
[1]
T
j
=25°C - 370 580 mΩ
T
j
= 150 °C - 663 985 mΩ
V
GS
=2.5V; I
D
= 0.1 A - 440 690 mΩ
V
GS
=1.8V; I
D
= 75 mA - 540 920 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=1A; V
DS
=15V;
V
GS
=4.5V
-0.89-nC
Q
GS
gate-source charge - 0.1 - nC
Q
GD
gate-drain charge - 0.2 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V;
f=1MHz
-43-pF
C
oss
output capacitance - 7.7 - pF
C
rss
reverse transfer
capacitance
-4.8-pF
t
d(on)
turn-on delay time V
DS
=15V; R
L
=15Ω;
V
GS
=10V; R
G
=6Ω
-4.0-ns
t
r
rise time -7.5-ns
t
d(off)
turn-off delay time - 18 - ns
t
f
fall time - 4.5 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 0.3 A; V
GS
= 0 V - 0.76 1.2 V