Datasheet

PBRP123ET_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 16 January 2008 6 of 12
NXP Semiconductors
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −30 V;
I
E
=0A
--−100 nA
I
CEO
collector-emitter cut-off
current
V
CE
= −30 V;
I
B
=0A
--−0.5 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5V;
I
C
=0A
--−2mA
h
FE
DC current gain V
CE
= −5V;
I
C
= −50 mA
70 120 -
V
CE
= −5V;
I
C
= −300 mA
[1]
180 250 -
V
CE
= −5V;
I
C
= −600 mA
[1]
170 240 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −50 mA;
I
B
= −2.5 mA
- −35 −45 mV
I
C
= −200 mA;
I
B
= −10 mA
- −70 −100 mV
I
C
= −500 mA;
I
B
= −10 mA
[1]
- −200 −300 mV
I
C
= −600 mA;
I
B
= −6mA
[1]
- −450 −750 mV
V
I(off)
off-state input voltage V
CE
= −5V;
I
C
= −100 µA
−0.6 −1 −1.8 V
V
I(on)
on-state input voltage V
CE
= −0.3 V;
I
C
= −20 mA
−1 −1.3 −2V
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.9 1 1.1
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A;
f=1MHz
-11-pF