Datasheet

PBRP113ET_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 17 December 2007 5 of 12
NXP Semiconductors
PBRP113ET
PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
Ceramic PCB, Al
2
O
3
standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
006aab001
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0.75
0.50
0.33
0.20
0.01
0.10
0.05
0.02
0
δ = 1
006aab002
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0.75
0.50
0.33
0.20
0.01
0.10
0.05
0.02
0
δ = 1