Datasheet

PBRP113ET_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 17 December 2007 4 of 12
NXP Semiconductors
PBRP113ET
PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
[2]
- - 338 K/W
[3]
- - 219 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 105 K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
006aab000
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0.75
0.50
0.33
0.20
0.01
0.10
0.05
0.02
0
δ = 1