Datasheet

PBRP113ET_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 17 December 2007 3 of 12
NXP Semiconductors
PBRP113ET
PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[2] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
P
tot
total power dissipation T
amb
≤ 25 °C
[3]
- 250 mW
[1]
- 370 mW
[2]
- 570 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves for SOT23 (TO-236AB)
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
−75 17512525 75−25
006aaa998
200
400
600
P
tot
(mW)
0
(1)
(2)
(3)