Datasheet

PBRN113Z_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 26 February 2007 5 of 17
NXP Semiconductors
PBRN113Z series
NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 10 kΩ
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
FR4 PCB, standard footprint
Fig 2. Power derating curve for SOT54 (SC-43A/TO-92)
T
amb
(°C)
−75 17512525 75−25
006aaa999
200
600
400
800
P
tot
(mW)
0
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
PBRN113ZK, PBRN113ZT
[1]
- - 500 K/W
[2]
- - 338 K/W
[3]
- - 219 K/W
PBRN113ZS
[1]
- - 179 K/W
R
th(j-sp)
thermal resistance from junction
to solder point
PBRN113ZK, PBRN113ZT - - 105 K/W