Datasheet

PBRN113Z_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 26 February 2007 3 of 17
NXP Semiconductors
PBRN113Z series
NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 10 kΩ
3. Ordering information
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 4. Ordering information
Type number Package
Name Description Version
PBRN113ZK SC-59A plastic surface-mounted package; 3 leads SOT346
PBRN113ZS
[1]
SC-43A plastic single-ended leaded (through hole) package;
3 leads
SOT54
PBRN113ZT - plastic surface-mounted package; 3 leads SOT23
Table 5. Marking codes
Type number Marking code
[1]
PBRN113ZK G5
PBRN113ZS N113ZS
PBRN113ZT *7L
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 40 V
V
CEO
collector-emitter voltage open base - 40 V
V
EBO
emitter-base voltage open collector - 5 V
V
I
input voltage
positive - +10 V
negative - −5V
I
O
output current
PBRN113ZK, PBRN113ZT
[1]
- 600 mA
[2][3]
- 700 mA
PBRN113ZS
[1]
- 800 mA
I
ORM
repetitive peak output current
PBRN113ZK, PBRN113ZT t
p
≤ 1 ms; δ≤0.33 - 800 mA