Datasheet

PBRN113E_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 March 2007 8 of 17
NXP Semiconductors
PBRN113E series
NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V;
I
E
=0A
- - 100 nA
I
CEO
collector-emitter cut-off
current
V
CE
=30V;
I
B
=0A
- - 0.5 µA
I
EBO
emitter-base cut-off
current
V
EB
=5V;
I
C
=0A
--4mA
h
FE
DC current gain V
CE
=5V;
I
C
=50mA
40 75 -
V
CE
=5V;
I
C
= 300 mA
[1]
180 300 -
V
CE
=5V;
I
C
= 600 mA
[1]
250 400 -
V
CE
=5V;
I
C
= 800 mA
[1]
270 420 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 50 mA;
I
B
= 2.5 mA
- 2535mV
I
C
= 200 mA;
I
B
=10mA
- 6085mV
I
C
= 500 mA;
I
B
=10mA
[1]
- 160 220 mV
I
C
= 600 mA;
I
B
=6mA
[1]
- 320 550 mV
I
C
= 800 mA;
I
B
=8mA
[1]
- 0.68 1.15 V
V
I(off)
off-state input voltage V
CE
=5V;
I
C
= 100 µA
0.6 1 1.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V;
I
C
=20mA
1 1.3 1.8 V
R1 bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 0.9 1 1.1
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A;
f=1MHz
-7-pF