Datasheet

2001 Jan 18 5
Philips Semiconductors Preliminary specification
UHF wideband transistor PBR941B
handbook, halfpage
0 50 100
T
s
(°C)
P
tot
(mW)
200
400
300
100
0
200
150
MDA871
Fig.2 Power derating as a function of soldering
point temperature.
handbook, halfpage
0
I
C
(mA)
10 50
160
120
40
0
70
20 30 40
MCD974
h
FE
Fig.3 DC current gain as a function of collector
current; typical values.
V
CE
=6V.
handbook, halfpage
04 12
0.5
0
0.4
MGS498
8
0.3
0.2
0.1
V
CB
(V)
C
re
(pF)
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
I
C
=I
c
=0; f=1MHz.
handbook, halfpage
050
10
0
2
4
6
8
10 20 30 40
I
C
(mA)
f
T
(GHz)
MCD975
Fig.5 Transition frequency as a function of
collector current; typical values.
V
CE
=6V; f
m
=1GHz; T
amb
=25°C.