Datasheet

2001 Jan 18 4
Philips Semiconductors Preliminary specification
UHF wideband transistor PBR941B
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC characteristics
V
(BR)CBO
collector-base breakdown voltage I
C
=100µA; I
E
=0 20 −−V
V
(BR)CEO
collector-emitter breakdown
voltage
I
C
=100µA; I
B
=0 10 −−V
V
(BR)EBO
emitter-base breakdown voltage I
E
=10µA; I
C
=0 1.5 −−V
V
BEF
forward base-emitter voltage I
E
=25mA −−1.05 V
I
CBO
collector-base leakage current V
CB
=10V; I
E
=0 −−100 nA
I
EBO
emitter-base leakage current V
EB
=1V; I
C
=0 −−100 nA
h
FE
DC current gain I
C
=5mA; V
CE
= 6 V 100 150 200
I
C
=15mA; V
CE
=6V − 150 −
AC characteristics
C
re
feedback capacitance I
C
=0; V
CB
=6V; f=1MHz − 0.3 − pF
f
T
transition frequency I
C
=15mA; V
CE
=6V; f
m
=1GHz 7 9 − GHz
|s
21
|
2
insertion gain I
C
=15mA; V
CE
= 6 V; f = 1 GHz 13 15 − dB
G
UM
maximum unilateral power gain;
note 1
I
C
=15mA; V
CE
=6V;
T
amb
=25°C; f = 1 GHz
− 16 − dB
I
C
=15mA; V
CE
=6V;
T
amb
=25°C; f = 2 GHz
− 10 − dB
NF noise figure Γ
S
= Γ
opt
; I
C
=5mA; V
CE
=6V;
f=1GHz
− 1.5 2.5 dB
Γ
S
= Γ
opt
; I
C
=5mA; V
CE
=6V;
f=2GHz
− 2.1 − dB
G
UM
10
s
21
2
1s
11
2
–()1s
22
2
–()
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