Datasheet

2001 Jan 18 3
Philips Semiconductors Preliminary specification
UHF wideband transistor PBR941B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 20 V
V
CEO
collector-emitter voltage open base − 10 V
V
EBO
emitter-base voltage open collector − 1.5 V
I
C
collector current (DC) − 50 mA
I
C(AV)
average collector current − 50 mA
P
tot
total power dissipation T
s
=60°C; note 1 − 360 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 320 K/W