Datasheet

2001 Jan 18 2
Philips Semiconductors Preliminary specification
UHF wideband transistor PBR941B
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
PINNING SOT23
PIN DESCRIPTION
1base
2 emitter
3 collector
handbook, halfpage
MSB003Top view
12
3
Fig.1 Simplified outline (SOT23).
Marking code: LBp
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
re
feedback capacitance I
C
=0; V
CB
=6V; f=1MHz − 0.3 − pF
f
T
transition frequency I
C
=15mA; V
CE
=6V; f
m
=1GHz 7 9 − GHz
G
UM
maximum unilateral power gain I
C
=15mA; V
CE
=6V;
T
amb
=25°C; f = 1 GHz
− 16 − dB
NF noise figure Γ
S
= Γ
opt
; I
C
=5mA; V
CE
=6V;
f=1GHz
− 1.5 2.5 dB
P
tot
total power dissipation T
s
=60°C; note 1 −−360 mW
R
th j-s
thermal resistance from junction
to soldering point
−−320 K/W