Datasheet

1998 Aug 10 5
Philips Semiconductors Product specification
UHF wideband transistor PBR941
Fig.2 Power derating as a function of soldering
point temperature.
handbook, halfpage
0 50 100
T
s
(°C)
P
tot
(mW)
200
400
300
100
0
200
150
MDA871
Fig.3 DC current gain as a function of collector
current; typical values.
V
CE
=6V.
handbook, halfpage
0
h
FE
I
C
(mA)
120
80
40
0
10 50
20 30 40
MDA872
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
I
C
= 0; f = 1 MHz.
handbook, halfpage
04
V
CB
(V)
C
re
(pF)
812
0.5
0
0.4
0.3
0.2
0.1
MDA873
Fig.5 Transition frequency as a function of
collector current; typical values.
V
CE
= 6 V; f = 1 GHz; T
amb
=25°C.
handbook, halfpage
01020
f
T
(GHz)
I
C
(mA)
40
10
0
8
30
6
4
2
MDA874