Datasheet

1998 Aug 10 2
Philips Semiconductors Product specification
UHF wideband transistor PBR941
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
PINNING - SOT23
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline and symbol.
Marking code: V0.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
re
feedback capacitance I
C
= 0; V
CB
= 6 V; f = 1 MHz 0.3 − pF
f
T
transition frequency I
C
= 15 mA; V
CE
=6V; f
m
= 1 GHz 8 − GHz
G
UM
maximum unilateral power gain I
C
= 15 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
=25°C
15 − dB
F noise figure Γ
S
= Γ
opt
; I
C
= 5 mA; V
CE
=6V;
f = 1 GHz
1.4 − dB
P
tot
total power dissipation T
s
=60°C; note 1 − 360 mW
R
th j-s
thermal resistance from junction
to soldering point
P
tot
= 360 mW − 320 K/W