Datasheet

PBLS6002D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 7 September 2009 7 of 16
NXP Semiconductors
PBLS6002D
60 V PNP BISS loadswitch
[1] Pulse test: t
p
≤ 300 µs; δ≤ 0.02
V
BEon
base-emitter turn-on
voltage
V
CE
= −5 V; I
C
= −1A
[1]
- −0.82 −0.9 V
t
d
delay time I
C
= −0.5 A;
I
Bon
= −25 mA;
I
Boff
=25mA
-11-ns
t
r
rise time - 30 - ns
t
on
turn-on time - 41 - ns
t
s
storage time - 205 - ns
t
f
fall time - 55 - ns
t
off
turn-off time - 260 - ns
f
T
transition frequency I
C
= −50 mA;
V
CE
=−10 V;
f = 100 MHz
150 185 - MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
= 0 A; f = 1 MHz
- 9 15 pF
TR2; NPN resistor-equipped transistor
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter cut-off
current
V
CE
=30V; I
B
=0A --1µA
V
CE
=30V; I
B
=0A;
T
j
= 150 °C
--50µA
I
EBO
emitter-base cut-off current V
EB
=5V; I
C
= 0 A - - 900 µA
h
FE
DC current gain V
CE
=5V; I
C
=20mA 30 - -
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA;
I
B
= 0.5 mA
- - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 µA - 1.1 0.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V;
I
C
=20mA
2.5 1.9 - V
R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
= 0 A; f = 1 MHz
- - 2.5 pF
Table 7. Characteristics
…continued
T
amb
= 25 ° C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit