Datasheet

PBLS6001D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 7 September 2009 9 of 16
NXP Semiconductors
PBLS6001D
60 V PNP BISS loadswitch
T
amb
=25°CI
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 9. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig 10. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa478
V
CE
(V)
0 −5−3−1 −2 −4
−0.8
−1.2
−0.4
−1.6
−2.0
I
C
(A)
0.0
I
B
(mA) = −35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5
006aaa479
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
(3)
006aaa480
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
006aaa481
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
(3)