Datasheet

PBLS6001D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 7 September 2009 6 of 16
NXP Semiconductors
PBLS6001D
60 V PNP BISS loadswitch
7. Characteristics
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
006aaa464
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0.75
0.5
0.33
0.2
0.1
δ = 1
0.05
0.02
0.01
0
Table 7. Characteristics
T
amb
= 25 ° C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low V
CEsat
transistor
I
CBO
collector-base cut-off
current
V
CB
= −60 V; I
E
=0A - - −100 nA
V
CB
= −60 V; I
E
=0A;
T
j
= 150 °C
--−50 µA
I
CES
collector-emitter cut-off
current
V
CE
= −60 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 200 350 -
V
CE
= −5 V; I
C
= −500 mA
[1]
150 230 -
V
CE
= −5 V; I
C
= −1000 mA
[1]
100 160 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −1mA - −110 −175 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
- −135 −180 mV
I
C
= −1000 mA;
I
B
= −100 mA
[1]
- −255 −340 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −1 A; I
B
= −100 mA
[1]
- 255 340 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= −1 A; I
B
= −50 mA
[1]
- −0.95 −1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −5 V; I
C
= −1A
[1]
- −0.82 −0.9 V