Datasheet

PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 16 February 2009 3 of 11
NXP Semiconductors
PBLS4004Y; PBLS4004V
40 V PNP BISS loadswitch
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
TR1; PNP low V
CEsat
transistor
V
CBO
collector-base voltage open emitter - 40 V
V
CEO
collector-emitter voltage open base - 40 V
V
EBO
emitter-base voltage open collector - 6V
I
C
collector current - 500 mA
I
CM
peak collector current single pulse; t
p
1ms - 1A
I
B
base current - 50 mA
I
BM
peak base current single pulse; t
p
1ms - 100 mA
P
tot
total power dissipation T
amb
25 °C
[1]
- 200 mW
TR2; NPN resistor-equipped transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 10 V
V
I
input voltage
positive - +40 V
negative - 10 V
I
O
output current - 100 mA
I
CM
peak collector current single pulse; t
p
1 ms - 100 mA
P
tot
total power dissipation T
amb
25 °C
[1]
- 200 mW
Per device
P
tot
total power dissipation - 300 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature 65 +150 °C
T
stg
storage temperature 65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
- - 416 K/W
SOT666
[1][2]
- - 416 K/W