Datasheet
Table Of Contents

PBLS2002D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 27 August 2009 7 of 16
NXP Semiconductors
PBLS2002D
20 V PNP BISS loadswitch
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02
TR2; NPN resistor-equipped transistor
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 µA
V
CE
=30V; I
B
=0A;
T
j
= 150 °C
-- 50µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 900 µA
h
FE
DC current gain V
CE
=5V; I
C
=10mA 30 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 µA - 1.1 0.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 20 mA 2.5 1.9 - V
R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- - 2.5 pF
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit