Datasheet
1. Product profile
1.1 General description
Low V
CEsat
PNP transistor and NPN resistor-equipped transistor in one package.
1.2 Features
n Low V
CEsat
(BISS) and resistor-equipped transistor in one package
n Low ‘threshold’ voltage (< 1 V) compared to MOSFET
n Low drive power required
n Space-saving solution
n Reduction of component count
1.3 Applications
n Supply line switches
n Battery charger switches
n High-side switches for LEDs, drivers and backlights
n Portable equipment
1.4 Quick reference data
PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch
Rev. 03 — 25 August 2009 Product data sheet
Table 1. Product overview
Type number Package
NXP JEITA
PBLS1504Y SOT363 SC-88
PBLS1504V SOT666 -
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP; low V
CEsat
transistor
V
CEO
collector-emitter voltage open base - - −15 V
I
C
collector current (DC) - - −500 mA
R
CEsat
equivalent on-resistance I
C
= −500 mA;
I
B
= −50 mA
- 300 500 mΩ
TR2; NPN; resistor-equipped transistor
V
CEO
collector-emitter voltage open base - - 50 V