Datasheet

PBLS1503Y_PBLS1503V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 24 August 2009 4 of 14
NXP Semiconductors
PBLS1503Y; PBLS1503V
15 V PNP BISS loadswitch
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02
Table 8. Characteristics
T
amb
= 25 ° C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR1: PNP
I
CBO
collector-base cut-off
current
V
CB
= −15 V; I
E
= 0 A - - −100 nA
V
CB
= −15 V; I
E
= 0 A; T
j
= 150 °C- - −50 µA
I
CES
collector-emitter
cut-off current
V
CE
= −15 V; V
BE
= 0 V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
= 0 A - - −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −10 mA 200 - -
V
CE
= −2 V; I
C
= −100 mA
[1]
150 - -
V
CE
= −2 V; I
C
= −500 mA
[1]
90 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA; I
B
= −0.5 mA - - −25 mV
I
C
= −200 mA; I
B
= −10 mA - - −150 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
--−250 mV
R
CEsat
equivalent
on-resistance
I
C
= −500 mA; I
B
= −50 mA
[1]
- 300 500 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA
[1]
--−1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2 V; I
C
= −100 mA
[1]
--−0.9 V
f
T
transition frequency V
CE
= −5 V; I
C
= −100 mA;
f = 100 MHz
100 280 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= i
e
= 0 A;
f=1MHz
--10pF
Transistor TR2: NPN
I
CBO
collector-base cut-off
current
V
CB
= 50 V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
= 30 V; I
B
= 0 A - - 1 µA
V
CE
= 30 V; I
B
= 0 A; T
j
= 150 °C--50µA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A - - 400 µA
h
FE
DC current gain V
CE
= 5 V; I
C
= 5 mA 30 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
= 5 V; I
C
= 100 µA - 1.1 0.8 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 10 mA 2.5 1.8 - V
R1 bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
=10V;I
E
=i
e
= 0 A; f = 1 MHz - - 2.5 pF