Datasheet

PBLS1503Y_PBLS1503V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 24 August 2009 3 of 14
NXP Semiconductors
PBLS1503Y; PBLS1503V
15 V PNP BISS loadswitch
5. Limiting values
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Transistor TR1: PNP
V
CBO
collector-base voltage open emitter - −15 V
V
CEO
collector-emitter voltage open base - −15 V
V
EBO
emitter-base voltage open collector - −6V
I
C
collector current (DC) - −500 mA
I
CM
peak collector current t
p
≤ 1 ms; δ≤0.02 - −1A
I
B
base current (DC) - −50 mA
I
BM
peak base current t
p
≤ 1 ms; δ≤0.02 - −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 200 mW
Transistor TR2: NPN
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 10 V
V
I
input voltage -
positive - +40 V
negative - −10 V
I
O
output current (DC) - 100 mA
I
CM
peak collector current - 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 200 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C - 300 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
- - 416 K/W
SOT666
[1][2]
- - 416 K/W