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1. Product proﬁle

1.1 General description

Low V

CEsat

PNP transistor and NPN resistor-equipped transistor in one package.

1.2 Features

n Low V

CEsat

(BISS) transistor and resistor-equipped transistor in one package

n Low ‘threshold’ voltage (< 1 V) compared to MOSFET

n Low drive power required

n Space-saving solution

n Reduction of component count

1.3 Applications

n Supply line switches

n Battery charger switches

n High-side switches for LEDs, drivers and backlights

n Portable equipment

1.4 Quick reference data

PBLS1502Y; PBLS1502V

15 V PNP BISS loadswitch

Rev. 03 — 24 August 2009 Product data sheet

Table 1. Product overview

Type number Package

NXP JEITA

PBLS1502Y SOT363 SC-88

PBLS1502V SOT666 -

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP: low V

CEsat

transistor

CEO

collector-emitter voltage open base - - −15 V

collector-current (DC) - - −500 mA

CEsat

equivalent on-resistance I

=−500 mA;

=−50 mA

- 300 500 mΩ

TR2; NPN: resistor-equipped transistor

CEO

collector-emitter voltage open base - - 50 V

Summary of content (14 pages)

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PBLS1502Y; PBLS1502V 15 V PNP BISS loadswitch Rev. 03 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1. Product overview Type number Package NXP JEITA PBLS1502Y SOT363 SC-88 PBLS1502V SOT666 - 1.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch Table 2. Quick reference data …continued Symbol Parameter Min Typ Max Unit IO output current (DC) Conditions - - 100 mA R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 2. Pinning information Table 3.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 7. Characteristics Table 8.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 001aaa181 600 hFE 001aaa185 −103 VCEsat (mV) (1) (1) −102 400 (2) (3) (2) −10 200 (3) 0 −10−1 −1 −10 −102 −1 −10−1 −103 −1 −10 −102 IC (mA) VCE = −2 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 1. −103 IC (mA) TR1(PNP): DC current gain as a function of collector current; typical values 001aaa183 −1100 VBE (mV) −900 Fig 2.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 001aaa182 −1200 RCEsat (Ω) (1) (2) (3) IC (mA) 001aaa186 103 102 (4) (5) −800 (6) (7) 10 (8) −400 (9) (1) 1 (10) 0 0 −2 −4 −6 (2) (3) −8 −10 VCE (V) 10−1 −10−1 −1 −10 −102 −103 IC (mA) Tamb = 25 °C IC/IB = 20 (1) IB = −7.0 mA (1) Tamb = −55 °C (2) IB = −6.3 mA (2) Tamb = 25 °C (3) IB = −5.6 mA (3) Tamb = 150 °C (4) IB = −4.9 mA (5) IB = −4.2 mA (6) IB = −3.5 mA (7) IB = −2.8 mA (8) IB = −2.1 mA (9) IB = −1.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 006aaa004 −1 006aaa005 103 RCEsat (Ω) VCEsat (V) 102 −10−1 (1) (1) 10 (2) (2) (3) −10−2 1 (3) −10−3 −10−1 −1 −10 −102 −103 10−1 −10−1 −1 Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (2) IC/IB = 50 (3) IC/IB = 10 (3) IC/IB = 10 TR1; PNP: Collector-emitter saturation voltage as a function of collector current; typical values Fig 8.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 001aaa188 103 001aaa187 1 hFE VCEsat (V) (1) 102 (2) (3) 10−1 (1) 10 (2) (3) 1 10−1 1 102 10 10−2 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 9. 102 10 IC (mA) TR2(NPN): DC current gain as a function of collector current; typical values 001aaa189 102 VI(on) (V) Fig 10.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 8. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 10. Revision history Table 10. Revision history Document ID Release date PBLS1502Y_PBLS1502V_3 20090824 Modifications: Data sheet status Change notice Supersedes Product data sheet - PBLS1502Y_PBLS1502V_2 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PBLS1502Y; PBLS1502V NXP Semiconductors 15 V PNP BISS loadswitch 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors PBLS1502Y; PBLS1502V 15 V PNP BISS loadswitch 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . .